NPI Engineering Intern - Advanced CMOS Device

About the Internship   

Our Summer internship provides an experience in the fast-paced and exciting semiconductor industry. Our interns will work alongside industry projects and gain valuable insights into our core engineering roles. This program is designed to grow and shape the industry leaders of tomorrow, offering a chance to learn, develop and build the skills needed for a successful career in the semiconductor field.    

 

What to expect  

This position is a paid internship. The duration will be in Hsin-Chu (Hybrid Model). Our internship program is for students who are actively enrolled in a full-time academic program. Recent graduates seeking employment after graduation and not returning to school should apply for our Early Career opportunities.   

 

Job's mission

We are seeking a highly motivated Engineering Intern to support research and analysis of advanced CMOS transistor electrical behavior, with a focus on how channel materials, interfacial layers (IL), and High‑k Metal Gate (HKMG) stacks influence device performance and reliability. 

This internship centers on deep technical literature review and knowledge synthesis. The intern will analyze published research to understand the physical mechanisms and material–device interactions that govern electrical characteristics in advanced logic devices. The results will be consolidated into a structured knowledge base to support ongoing and future device and process development activities. 

This role is well suited for PhD students with strong backgrounds in semiconductor physics, device engineering, or materials science who are interested in advanced device architectures and gate stack engineering. 

 

What You Will Do 

• Conduct a structured review of academic journals and conference publications related to advanced CMOS devices 
• Analyze how channel material properties (e.g., band structure, strain, surface roughness, scattering mechanisms) impact:  
  • Carrier mobility 
  • Drive current and leakage 
  • Device reliability 
• Study the role of interfacial layers (IL) as thickness scales to sub‑nanometer regimes, including:  
  • Material quality and defect characteristics 
  • Trade‑offs between scaling, performance, and long‑term stability 
• Evaluate the impact of High‑k Metal Gate (HKMG) stacks, including:  
  • High‑k dielectric and metal gate material choices 
  • Gate leakage behavior and threshold voltage (Vt) tuning 
  • Dipole formation, oxygen vacancy effects, and process variability 
• Integrate findings across channel, IL, and HKMG to describe cross‑layer interaction effects on device performance 
• Organize and document findings in a clear, structured, and reusable format for technical discussion 

 

Deliverables 

• A comprehensive written report describing how channel materials, IL properties, and HKMG stacks influence electrical performance and reliability in advanced CMOS devices 
• A summary presentation suitable for technical reviews 
• A curated and organized database of analyzed literature 

 

What You Will Gain 

• Hands‑on experience analyzing state‑of‑the‑art and beyond‑CMOS device technologies 
• Deep exposure to device physics and gate stack engineering challenges at advanced technology nodes 
• Experience in translating academic research into insights relevant for industrial R&D 
• Close interaction with experienced engineers and researchers in advanced device and materials development 

 

What we are looking for

• Currently pursuing a PhD degree in:  
  • Electrical Engineering 
  • Materials Science 
  • Applied Physics 
  • Solid‑State or Semiconductor‑related disciplines 
• Strong foundation in semiconductor physics and device engineering 
• Ability to read, analyze, and synthesize complex technical literature 
• Strong written communication skills in English 

 

What sets you apart

• Background in CMOS device physics, gate stack engineering, or reliability 
• Familiarity with concepts such as mobility degradation, interface traps, high‑k dielectrics, or metal gate work function engineering 
• Prior research experience in device, materials, or process technology 

 

Benefits  

• As an intern, you will gain hands-on experience by working on industry-related projects, providing you with valuable exposure to real-world processes and the opportunity to apply your skills in a professional setting.  

• Learn from the Best: Get the chance to work alongside world-class engineers and industry leaders who are shaping the future of technology—your personal dream team of innovators!  

• Step into the Future: Dive into one of the fastest-growing industries on the planet. From AI to 5G, you'll be right at the heart of the tech revolution.  

• Hands-On with Cutting-Edge Tech: Experience the latest and greatest in semiconductor design, testing, and fabrication. You’ll be working with the coolest tools and gadgets out there.  

• Network Like a Pro: Meet and connect with brilliant minds from all over the world, and make friendships that could open doors to amazing future career opportunities.  

• Make a Real Impact: Work on groundbreaking projects that power everything from smartphones to self-driving cars. Your contributions will help shape tomorrow’s world.  

• Challenge Your Mind: Sharpen your problem-solving skills as you take on real-world challenges, pushing boundaries and thinking outside the box.